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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200203 Issued Date : 2000.08.01 Revised Date : 2002.03.28 Page No. : 1/4
HTIP112
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP112 is designed for use in general purpose amplifier and lowspeed switching applications.
Absolute Maximum Ratings (Ta=25C)
TO-220
* Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 C Junction Temperature ................................................................................................ +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Tc=25C)................................................................................................. 50 W Total Power Dissipation (Ta=25C)................................................................................................... 2 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage ................................................................................................. 100 V BVCEO Collector to Emitter Voltage .............................................................................................. 100 V BVEBO Emitter to Base Voltage ....................................................................................................... 5 V IC Collector Current (Continue) ......................................................................................................... 4 A IC Collector Current (Peak)................................................................................................................ 6 A
Characteristics (Ta=25C)
Symbol BVCBO BVCEO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. 100 100 1 500 Typ. Max. 1 2 2 2.5 2.8 200 Unit V V mA mA mA V V K pF Test Conditions IC=1mA IC=30mA VCB=100V VCE=50V VEB=5V IC=2A, IB=8mA IC=2A, VCE=4V IC=1A, VCE=4V IC=2A, VCE=4V VCB=10V, f=0.1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Darlington Schematic
C
B
R1
R2
E
HTIP112
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
10000 10000
Spec. No. : HE200203 Issued Date : 2000.08.01 Revised Date : 2002.03.28 Page No. : 2/4
Current Gain & Collector Current
1000 125 C 75 C
o o
1000 125 C
o
75 C
o
hFE
100 25 C 10 hFE @ VCE=4V
o
hFE
100 25 C 10 hFE @ VCE=3V
o
1 1 10 100 1000 10000
1 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
10000 VCE(sat) @ IC=100IB 10000
Saturation Voltage & Collector Current
VCE(sat) @ IC=250IB
Saturation Voltage (mV)
1000
25 C
o
Saturation Voltage (mV)
1000
25 C
o
125 C
o
75 C
o
125 C 75 C
o
o
100 100
1000
10000
100 100
1000
10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
10000 10000
ON Voltage & Collcetor Current
Saturation Voltage (mV)
25 C 1000
o
ON Voltage (mV)
25 C 1000 125 C
o
o
125 C 75 C VBE(sat) @ IC=250IB
o
o
75 C
o
VBE(ON) @ VCE=4V
100 100
1000
10000
100 100
1000
10000
Collector Current-IC (mA)
Collector Current-IC (mA)
HTIP112
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200203 Issued Date : 2000.08.01 Revised Date : 2002.03.28 Page No. : 3/4
ON Voltage & Collcetor Current
10000 10
Switching Time & Collector Current
VCC=30V,IC=250IB1= -250IB2
25 C 1000 125 C
o
o
Switching Times (us). .
Tstg
ON Voltage (mV)
1
Tf
75 C
o
VBE(ON) @ VCE=3V
Ton
100 100
0.1 1000 10000 1 10
Collector Current-IC (mA)
Collector Current-IC (A)
Capcitance & Reverse-Biased Voltage
100 10
Safe Operating Area
PT=1mS PT=1S
Collector Current-IC (A)
Capacitance (pF)
1
Cob
PT=100mS 0.1
10 0.1 1 10 100
0.01 1 10 100
Reverse Biased Voltage (V)
Forward Voltage (V)
HTIP112
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A D B E C
Date Code
Spec. No. : HE200203 Issued Date : 2000.08.01 Revised Date : 2002.03.28 Page No. : 4/4
H 112
TIP
Control Code
H I G 4 P M 3 2 1 N K
Style: Pin 1.Base 2.Collector 3.Emitter
O
3-Lead TO-220AB Plastic Package HSMC Package Code: E *: Typical
DIM A B C D E G H
Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398
Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25
DIM I K M N O P
Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248
Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HTIP112
HSMC Product Specification

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